产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 150W,
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 74A, TO-220AB
(EN)
VISHAY
晶体管, MOSFET, P沟道, 19 A, -100 V, 200 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 200 V, 180 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 65 A, 60 V, 16 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 18A, TO-220AB
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 A, 60 V, 0.0017 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 150 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 110A, TO-247AC
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 64 A, -55 V, 20 mohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 5 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 200 V, 0.12 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 28 mohm, 10 V, 2.8 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -19 A, -100 V, 0.2 ohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 18A, D2-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 98 A, 55 V, 8 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 0.15 ohm, 10 V, 4 V
(EN)
