产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 39W,
INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.005 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0137 ohm, 10 V, 3.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0116 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 64 A, 100 V, 0.0039 ohm, 10 V, 2.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 0.23 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 0.0059 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.48 ohm, 10 V, 3.9 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 6.6A D-PAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00415 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 25V, 35A TO-252AA
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 9.4A, IPAK
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 10A, D-PAK
(EN)VISHAY
晶体管, MOSFET, P沟道, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -18 A, -40 V, 0.021 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -46 A, -40 V, 0.0083 ohm, -10 V, -2.3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0116 ohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 19 A, 55 V, 0.042 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -46 A, -40 V, 0.0083 ohm, -10 V, -2.3 V
(EN)
