产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 120W,
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 80V, 30A, D-PAKS
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -27 A, -60 V, 0.055 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 28 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -27 A, -60 V, 70 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 80V, 39A, DPAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.012 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0034 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -23 A, -100 V, 117 mohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 110 A, 30 V, 0.0033 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 9 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 14 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11.5 A, -200 V, 360 mohm, -10 V, -5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11.5 A, -200 V, 0.36 ohm, -10 V, -5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11.5 A, -200 V, 360 mohm, -10 V, -5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 61 A, 55 V, 14 mohm, 10 V, 3 V
(EN)INFINEON
场效应管, MOSFET, N沟道 通道, 80V, 39A, DPAK, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 27 A, -60 V, 0.055 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 A, 20 V, 6 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -27 A, -60 V, 0.055 ohm, -10 V, -4 V
(EN)
