产品分类：场效应管MOSFET晶体管(600V以下),规格：电流, Id 连续 5.8A,
INFINEON
晶体管, MOSFET, N沟道, 5.8 A, 25 V, 20 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.8 A, -20 V, 0.026 ohm, -4.5 V, -1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 25V, 5.8A, 3-SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.026Ω, 5.8A, SUPERSOT-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.8 A, -20 V, 0.026 ohm, -4.5 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.8 A, 25 V, 20 mohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.8 A, 20 V, 0.015 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.8 A, 20 V, 0.015 ohm, 4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.8 A, 30 V, 0.03 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.8 A, 30 V, 0.03 ohm, 10 V, 1.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 5.8A, 20V, 2W
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.8 A, -30 V, 0.023 ohm, -10 V, -1 V
(EN)
