产品分类：场效应管MOSFET晶体管(600V以下),规格：电流, Id 连续 -50A,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -40 V, 10.1 mohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -60 V, 0.012 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0082 ohm, -10 V, -1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -60 V, 0.012 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 50A, TO-252
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -100 V, 17.8 mohm, -10 V, -2.8 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0092 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V
(EN)VISHAY
场效应管, MOSFET, P沟道, TO-252-3
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.012 ohm, -10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0076 ohm, -10 V, -1.5 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -50 A, -40 V, 0.012 ohm, -10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.01 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -40 V, 10.1 mohm, -10 V, -1.8 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 50A, TO-252
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -20 V, 0.0035 ohm, -4.5 V, 900 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -20 V, 0.0035 ohm, -4.5 V, 900 mV
(EN)
