DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -60 V, 0.077 ohm, -10 V, -2.6 V
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -300 mV
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
ROHM
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.032 ohm, -10 V, -2.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.044 ohm, -10 V, -1.8 V
VISHAY
场效应管, MOSFET, P沟道, -30V, -4A
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -1 V
VISHAY
MOSFET, P CHANNEL, -12V, -4A, SOT-363-6
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV
VISHAY
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -4 A, -16 V, 0.06 ohm, -4.5 V
DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.026 ohm, -4.5 V, -650 mV
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -100V, 4A, TO-205AF
NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.05 ohm, -4.5 V, -600 mV
NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV
RENESAS
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.075 ohm, -4.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV