ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 0.233 ohm, -10 V, -2.6 V
VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 285 mohm, -10 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 0.23 ohm, -10 V, -2 V
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
VISHAY
场效应管, MOSFET, P沟道, HEXDIP
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.088 ohm, -4.5 V, -800 mV
VISHAY
场效应管, MOSFET, P沟道, -60V, -1.6A, SOT-23-3
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
INFINEON
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 200 mohm, -10 V, -1 V
RENESAS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.219 ohm, -4.5 V
VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 285 mohm, -10 V, -1 V