产品分类：场效应管MOSFET晶体管(600V以下),规格：在电阻RDS（上） 0.0075ohm,
VISHAY
晶体管, MOSFET, P沟道, 13.7 A, -8 V, 0.0075 ohm, -4.5 V, -0.45 V
(EN)
VISHAY
P CHANNEL MOSFET, -8V, 13.7A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0075 ohm, -10 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0075 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.0075 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 53 A, 40 V, 0.0075 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0075 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -40 V, 0.0075 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 128 A, 150 V, 0.0075 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 18.6 A, -40 V, 0.0075 ohm, 20 V, -3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0075 ohm, 10 V, 3 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 100 V, 0.0075 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 100 V, 0.0075 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC-8, 整卷
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 22 A, 12 V, 0.0075 ohm, 4.5 V, 800 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 30 V, 7.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 100 V, 0.0075 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 18.6 A, -40 V, 0.0075 ohm, 20 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20.7 A, 40 V, 0.0075 ohm, 10 V, 2 V
(EN)
