产品分类：场效应管MOSFET晶体管(600V以下),规格：在电阻RDS（上） 90mohm,
NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 100 V, 90 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 90 mohm, -4.5 V, -400 mV
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, TO-220AB
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -36 A, -150 V, 90 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3.6 A, -20 V, 90 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 1.3A, SC-70, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.7 A, -12 V, 90 mohm, -4.5 V, -500 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, 3.6 A, -20 V, 90 mohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 150 V, 90 mohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 1.3A, SC-70
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 100 V, 90 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 90 mohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, P沟道
(EN)
