产品分类：场效应管MOSFET晶体管(600V以下),规格：在电阻RDS（上） 0.1ohm,
NEXPERIA
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -750 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -18.6 A, -60 V, 0.1 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 17 A, -55 V, 100 mohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 60 V, 100 mohm, 5 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 100 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 12A, TO-220
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC
(EN)
INFINEON
晶体管, MOSFET, P沟道, -19 A, -55 V, 0.1 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.1 ohm, 5 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.1 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 50 V, 100 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 14A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -60 V, 0.1 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -19 A, -55 V, 0.1 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 60 V, 0.1 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 500 V, 0.1 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 20 A, 200 V, 0.1 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -2 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.1 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.6 A, 200 V, 0.1 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -20 V, 0.1 ohm, -2.7 V, -700 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 30 V, 0.1 ohm, 4.5 V, 500 mV
(EN)
