产品分类：场效应管MOSFET晶体管(600V以下),规格：在电阻RDS（上） 18Mohm,
INFINEON
场效应管, MOSFET, N沟道, 100V, 9.3A, PQFN
(EN)
VISHAY
场效应管, P通道, MOSFET
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -80 A, -55 V, 18 mohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 60 V, 18 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 18 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 18 mohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 10 V, 5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 8.3A, 100V SOIC-8
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 15 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 59A, TO-220AB
INFINEON
晶体管, MOSFET, N沟道, 8.3 A, 100 V, 18 mohm, 10 V, 4.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.3 A, 100 V, 18 mohm, 10 V, 4.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 18 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 18 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 60 V, 18 mohm, 10 V, 3 V
(EN)
