产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs -1.4V,
INFINEON
晶体管, MOSFET, N沟道, 40 mA, 250 V, 30 ohm, 10 V, -1.4 V
(EN)
VISHAY
MOSFET Transistor
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.03 ohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 13 mohm, -10 V, -1.4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0016 ohm, -10 V, -1.4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 0.01 ohm, -10 V, -1.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -9.7 A, -30 V, 0.0088 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 9.8 A, -20 V, 0.0085 ohm, 12 V, -1.4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.025 ohm, -10 V, -1.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 200 mA, -240 V, 15 ohm, -10 V, -1.4 V
(EN)
VISHAY
P CHANNEL MOSFET, -30V, 12.6A, SOIC
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, 13.7A, SOIC
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.9 A, -20 V, 0.041 ohm, -2.5 V, -1.4 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 480 mA, -240 V, 11 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.185 ohm, -4.5 V, -1.4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.205 ohm, -4.5 V, -1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 mA, 240 V, 20 ohm, 10 V, -1.4 V
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.00125 ohm, -10 V, -1.4 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, -60A, POWERPAK SO-8
(EN)
