产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 1.2V,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 80 mohm, 4.5 V, 1.2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.4 ohm, 10 V, 1.2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 3.2A, SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.035 ohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 73 A, 40 V, 4.9 mohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 8.1 mohm, 10 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)MULTICOMP
场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-23-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0022 ohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.024 ohm, 10 V, 1.2 V
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-323-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 49 A, 40 V, 7.8 mohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.07 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N和P沟道, 8 V, 0.04 ohm, 4.5 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 33 A, 30 V, 0.006 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.003 ohm, 10 V, 1.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0082 ohm, 10 V, 1.2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 30A, SOIC-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
(EN)
