产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs -1V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -120 mA, -25 V, 7.9 ohm, -4.5 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -12 V, 32 mohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.067 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 1.3A SOT-23
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -281 mA, -20 V, 0.9 ohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -600 mA, -30 V, 600 mohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 610 mA, -30 V, 600 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 140 mohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -20 A, -55 V, 0.093 ohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -20 A, -55 V, 0.093 ohm, -10 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -760 mA, -30 V, 0.6 ohm, -10 V, -1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.7 A, -8 V, 52 mohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 8.2 A, -60 V, 85 mohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.8 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.8 A, -20 V, 0.026 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0024 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -13.2 A, -100 V, 0.119 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6.4 A, -20 V, 0.023 ohm, 4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -860 mA, -20 V, 120 mohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0073 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 350 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, P通道, MOSFET
(EN)
