产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 1.3V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 50 V, 3.5 ohm, 10 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 6SON
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 255 mA, 20 V, 1.6 ohm, 4.5 V, 1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.093 ohm, 4.5 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 5A, 0.024OHM, SON-6
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 5.5 A, 20 V, 0.029 ohm, 4.5 V, 1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 100 mA, 50 V, 6 ohm, 4 V, 1.3 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 47 A, 30 V, 0.0094 ohm, 4.5 V, 1.3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0039 ohm, 8 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5.9 A, 30 V, 0.022 ohm, 10 V, 1.3 V
(EN)TOSHIBA
晶体管, MOSFET, 功率, N沟道, 28 A, 60 V, 0.0066 ohm, 10 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 19 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.0059 ohm, 8 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 210 mA, 50 V, 1.17 ohm, 10 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0029 ohm, 10 V, 1.3 V
(EN)TOSHIBA
晶体管, MOSFET, 功率, N沟道, 24 A, 60 V, 0.009 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 240 V, 6 ohm, 10 V, 1.3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 260 mA, 240 V, 6 ohm, 10 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 44 A, 30 V, 0.0082 ohm, 8 V, 1.3 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 15 A, 60 V, 0.0139 ohm, 10 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0032 ohm, 10 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
