产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs -2.8V,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 60V, 0.23A, SOT-23-3
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -240 V, 12 ohm, -10 V, -2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -250 V, 10 ohm, -10 V, -2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, D-MOS, P沟道, -210 mA, -300 V, 17 ohm, -10 V, -2.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -100 V, 17.8 mohm, -10 V, -2.8 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 250 mohm, -10 V, -2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -200 V, 10 ohm, -10 V, -2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
(EN)
NXP
场效应管, P沟道, DMOS FET, -300V, -210mA, 3-SOT-223
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 12A, D-PAK
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -200 V, 10 ohm, -10 V, -2.8 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -250 V, 10 ohm, -10 V, -2.8 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -30 V, 250 mohm, -10 V, -2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -240 V, 12 ohm, -10 V, -2.8 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, -60V, -12A, D-PAK
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)
