产品分类：场效应管MOSFET晶体管(600V以下),规格：漏源电压, Vds -20V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -20 V, 0.06 ohm, -4.5 V, -800 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -750 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -20 V, 0.04 ohm, -4.5 V, -600 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -390 mA, -20 V, 0.7 ohm, -4.5 V, -900 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.067 ohm, -4.5 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.09 ohm, -4.5 V, -1.1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 65 mohm, -4.5 V, -550 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 410 mohm, -4.5 V, -600 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -390 mA, -20 V, 0.7 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 1.3A SOT-23
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.122 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 8 A, -20 V, 24 mohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -20 V, 130 mohm, -4.5 V, -800 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.33 ohm, -4.5 V, -700 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0077 ohm, -4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.037 ohm, 12 V, -800 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -281 mA, -20 V, 0.9 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.38 ohm, -4.5 V, -1.2 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4.2 A, -20 V, 0.04 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 140 mohm, -4.5 V, -1 V
(EN)TOSHIBA
晶体管, MOSFET, P沟道, 100 mA, -20 V, 8 ohm, -4 V, 1.1 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 45 mohm, -4.5 V, -500 mV
(EN)
