产品分类：场效应管MOSFET晶体管(600V以上),规格：晶体管封装类型 TO-220F,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, UNIFET系列, 600V, 6.5A, TO-220F
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 530 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.35 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.64 ohm, 0.64 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6.6 A, 800 V, 1.57 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 1.5KV, 8Ω, TO-220F-3
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.36 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 600V, 22A, TO-220F
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2.5 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.34 ohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.93 ohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 600 V, 0.19 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 1.29 ohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
(EN)
