产品分类：场效应管MOSFET晶体管(600V以上),规格：在电阻RDS（上） 3ohm,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 4.1 A, 800 V, 3 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 1 kV, 3 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 3 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 800V, 3A, TO-220
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 3 ohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 2.1 A, 800 V, 3 ohm, 10 V, 4 V
(EN)TOSHIBA
功率场效应管, MOSFET, N沟道, 4 A, 1 kV, 3 ohm, 10 V, 3.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 3 ohm, 10 V, 3.75 V
(EN)
