产品分类：场效应管MOSFET晶体管(600V以上),规格：阈值电压 Vgs 3.9V,
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4.8 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 7.1 A, 600 V, 0.98 ohm, 10 V, 3.9 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V
(EN)ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 38 A, 600 V, 70 mohm, 10 V, 3.9 V
(EN)
ON SEMICONDUCTOR
Power MOSFET, N Channel, 4.1 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4.1 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 600V, 3A, TO-220FP
(EN)
