INTERNATIONAL RECTIFIER
场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 50 mohm, 10 V, 1 V
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 45 mohm, 4.5 V, 1.2 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 1 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 0.03 ohm, 4.5 V, 400 mV
STMICROELECTRONICS
场效应管, MOSFET, 双N沟道, 60V, SOIC
VISHAY
MOSFET, N & P CHANNEL, 20V, 0.03OHM, 4A, 1206-8
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 1 V
ON SEMICONDUCTOR
场效应管, MOSFET, N+P沟道, 20V, 1206A
VISHAY
双路场效应管, MOSFET, 双N沟道, 4 A, 30 V, 0.053 ohm, 10 V, 3 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 4 A, 30 V, 0.053 ohm, 10 V, 3 V
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V