产品分类：双路场效应管MOSFET晶体管,规格：漏源电压, Vds 30V,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 30 A, 30 V, 0.0058 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.082 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.018 ohm, 20 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.3 A, 30 V, 0.011 ohm, 10 V, 1.9 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 13 mohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 700 mA, 30 V, 0.323 ohm, 10 V, 1.2 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 3.8 ohm, 10 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 29 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.7 A, 30 V, 0.06 ohm, 10 V, 1.7 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 29 mohm, 10 V, 1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 50 mohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0086 ohm, 10 V, 2.25 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 200 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N/P通道, MOSFET, 30V, SOIC
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0098 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC, SMD
(EN)NEXPERIA
双路场效应管, MOSFET, N和P沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
